iDEAL Semiconductor has introduced its first household of 200-V MOSFETs based mostly on high-performance SuperQ know-how. The SuperQ structure will increase silicon utilization from 50% to 95%, growing effectivity, decreasing vitality losses, and bettering cost-performance. It additionally preserves silicon’s core benefits: ruggedness, high-volume manufacturability, and reliability as much as 175 °C.
Now in mass manufacturing, the iS20M028S1P is a 25‑mΩ N‑channel MOSFET in a TO‑220 package deal. It presents a large protected working space and excessive present functionality, dealing with steady currents as much as 40 A. All models are 100% UIS examined in manufacturing to make sure reliability. Low switching losses enhance effectivity, whereas a 26.5-nC gate cost and +0.5-V gate-threshold variation make paralleling easier.
Units with the bottom resistance, accessible for sampling in TOLL and D2PAK‑7L packages, obtain a most on-resistance of simply 5.5 mΩ—1.2× decrease than the present market chief and 1.7× decrease than the next-best competitor, in accordance with iDEAL.
Functions for the 200‑V SuperQ household embrace motor drives, LED lighting, battery safety circuits, AI servers, remoted DC/DC energy modules, USB‑PD adapters, and solar energy techniques.
Datasheets and a full checklist of accessible half numbers, together with the sampling units, may be discovered right here.
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