Three 650-V SiC MOSFETs from Toshiba are available in compact surface-mount TOLL packages, boosting each energy density and effectivity. The 9.9×11.68×2.3-mm bundle shrinks quantity by greater than 80% in comparison with through-hole TO-247 and TO-247-4L(X) varieties.
TOLL additionally gives decrease parasitic impedance, decreasing switching losses. As a 4-terminal bundle, it allows a Kelvin supply connection for the gate drive, minimizing the impression of bundle inductance and supporting high-speed switching. For the TW048U65C 650-V SiC MOSFET, turn-on and turn-off losses are about 55% and 25% decrease, respectively, than the identical Toshiba merchandise within the TO-247 bundle with out Kelvin connection.
The third-generation MOSFETs on this launch goal switch-mode energy provides in servers, communication gear, and information facilities. They’re additionally fitted to EV charging stations, photovoltaic inverters, and UPS gear.
Datasheets and gadget availability are accessible through the product web page hyperlinks under.
Toshiba Digital Gadgets & Storage
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