The UFS 4.1 storage makes use of a 321-layer chip for quicker velocity, much less energy, and skinny measurement—made for AI options in slim telephones.
SK hynix has launched a UFS 4.1 cellular storage resolution constructed on its 321-layer 1Tb triple-level cell 4D NAND flash—the best layer depend achieved to date. The product is designed to fulfill rising demand for high-performance, low-power storage in smartphones dealing with on-device AI.
The brand new storage gives a sequential learn velocity of 4300MB/s, the quickest amongst UFS 4.1 merchandise. It additionally improves random learn velocity by 15% and write velocity by 40%, which helps with multitasking and quicker app response—necessary for AI workloads on cellular units.
Energy effectivity is improved by 7% in comparison with the earlier era utilizing 238-layer NAND. Thickness is diminished to 0.85mm, down from 1mm, making it appropriate for ultra-slim units.
Among the key options of the NAND flash embrace:
- World’s first 321-layer 1Tb triple-level cell (TLC) 4D NAND flash
- Optimized for on-device AI, balancing velocity and energy effectivity
- 7% enchancment in energy effectivity over the earlier 238-layer NAND era
- Extremely-thin type issue with diminished thickness (0.85mm → appropriate for slender smartphones)
- Quickest sequential learn velocity in UFS 4.1 class at 4300MB/s
- Enhanced multitasking efficiency with 15% quicker random learn and 40% quicker random write
- Supplied in 512GB and 1TB capacities
- Helps AI-driven workloads with quicker information entry and responsiveness
Ahn Hyun, President and Chief Improvement Officer, stated that SK hynix plans to finish improvement of the 321-high 4D NAND-based SSD for each shoppers and information facilities inside the 12 months. “We’re on observe to increase our place as a full-stack AI reminiscence supplier within the NAND house by constructing a product portfolio with an AI technological edge.”
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