Engineered to cut back reverse conduction losses and eradicate dead-time penalties, this innovation permits larger efficiency throughout functions like telecom, servers, DC-DC converters, USB-C chargers, PSUs, and motor drives.
Infineon Applied sciences AG has introduced the discharge of the world’s first industrial-grade gallium nitride (GaN) transistor household that includes an built-in Schottky diode. The brand new CoolGaN Transistor G5 collection units a brand new benchmark for energy methods, delivering enhanced effectivity and streamlined design for a variety of business functions.
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- In contrast to standard GaN transistors, CoolGaN G5 reduces reverse conduction losses.
- Built-in Schottky diode lowers conduction losses throughout third-quadrant operation.
- Enhanced compatibility with customary energy controllers simplifies system design.
- First product: 100 V, 1.5 mΩ GaN transistor in a compact 3 x 5 mm PQFN bundle.
It straight addresses the challenges engineers face when designing with GaN know-how. In hard-switching functions, GaN transistors usually undergo from elevated energy losses attributable to excessive reverse conduction voltages, particularly throughout prolonged controller dead-times. Till now, designers have been pressured to compensate with exterior Schottky diodes or fastidiously tuned controllers—options that add complexity, price, and growth time.
The CoolGaN G5 transistors eradicate these challenges by integrating a Schottky diode straight into the machine. This design reduces dead-time-related losses and simplifies energy stage design, providing builders a extra environment friendly and cost-effective path to efficiency optimization. Focusing on functions akin to server and telecom intermediate bus converters (IBCs), DC-DC converters, USB-C battery chargers, high-power energy provide models (PSUs), and motor drives, the brand new CoolGaN G5 household helps a variety of demanding industrial methods.
“As GaN adoption accelerates throughout the ability electronics panorama, Infineon stays dedicated to elevating efficiency requirements,” mentioned Antoine Jalabert, Vice President of Infineon’s Medium-Voltage GaN Product Line. “The CoolGaN G5 with built-in Schottky diode highlights our deal with significant innovation, empowering prospects to simplify designs whereas bettering effectivity.”
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