Supplied within the Compact SlimSMA HV (DO-221AC) Package deal, 1 A and a couple of A Units Provide Low Capacitive Cost and Excessive Minimal Creepage Distance of three.2 mm
Vishay Intertechnology, Inc. launched three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes within the compact, low profile SlimSMA HV (DO-221AC) package deal. That includes a merged PIN Schottky (MPS) design and minimal creepage distance of three.2 mm, the 1 A VS-3C01EJ12-M3 and a couple of A VS-3C02EJ07-M3 and VS-3C02EJ12-M3 mix low capacitive cost with temperature-invariant switching conduct to extend effectivity in excessive velocity, hard-switching energy designs.
For top voltage purposes, the excessive creepage distance of the Vishay Semiconductors units supplies improved electrical isolation, whereas their SlimSMA HV package deal incorporates a molding compound with a excessive CTI ≥ 600 to make sure wonderful electrical insulation. For space-constrained designs, the diodes provide a low profile of 0.95 mm in comparison with 2.3 mm for competing SMA and SMB packages with an analogous footprint.
In contrast to silicon diodes, the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 keep a low capacitive cost all the way down to 7.2 nC regardless of temperature, leading to sooner switching speeds, lowered energy losses, and improved effectivity for top frequency purposes. As well as, the units have nearly no restoration tail, which additional improves effectivity, whereas their MPS construction delivers a lowered ahead voltage drop all the way down to 1.30 V.
With a excessive working temperature of +175 °C, typical purposes for the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 will embrace bootstrap, anti-parallel, and PFC diodes for DC/DC and AC/DC converters in server energy provides; vitality era and storage techniques; industrial drives and instruments; and X-ray mills. For straightforward paralleling in these purposes, the units provide a constructive temperature coefficient.
RoHS-compliant and halogen-free, the diodes characteristic a Moisture Sensitivity Stage of 1 in accordance with J-STD-020 and meet the JESD 201 class 2 whisker check.