onsemi has developed energy semiconductors primarily based on a vertical GaN (vGaN) structure that improves effectivity, energy density, and ruggedness. These GaN-on-GaN gadgets conduct present vertically by the semiconductor, supporting greater working voltages and quicker switching frequencies.
Most commercially accessible GaN gadgets are constructed on silicon or sapphire substrates, which conduct present laterally. onsemi’s GaN-on-GaN expertise permits vertical present stream in a monolithic die, dealing with voltages as much as and past 1200 V whereas delivering greater energy density, higher thermal stability, and strong efficiency underneath excessive circumstances. In contrast with lateral GaN semiconductors, vGaN gadgets are roughly 3 times smaller.
These benefits translate to vital system-level advantages. Excessive-end energy methods utilizing vGaN can reduce vitality and warmth losses by practically 50%, whereas lowering dimension and weight. The expertise permits smaller, lighter, and extra environment friendly methods for AI information facilities, electrical autos, and different electrification purposes.
onsemi is now sampling 700-V and 1200-V vGaN gadgets to early entry prospects. For extra details about vertical GaN, click on right here.
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