Infineon’s 750-V CoolSiC G2 MOSFETs improve system effectivity and energy density in automotive and industrial energy conversion. The second-generation G2 know-how offers typical on-resistance values as much as 60 mΩ, supporting a variety of functions corresponding to onboard chargers, DC/DC converters, xEV auxiliaries, and photo voltaic inverters. A best-in-class RDS(on) of 4 mΩ is offered within the top-side cooled Q-DPAK package deal, which delivers sturdy thermal efficiency and reliability.
G2 know-how additionally provides low RDS(on) × Qoss and RDS(on) × Qfr values, lowering switching losses in each hard- and soft-switching topologies, with sturdy effectivity in hard-switching use instances. Decrease gate cost allows quicker switching and reduces gate drive losses, enhancing efficiency in high-frequency functions.
The 750-V MOSFETs present a excessive VGS(th) of 4.5 V and a low QGD/QGS ratio, enhancing safety in opposition to parasitic turn-on. In addition they help gate voltages all the way down to -11 V, providing prolonged design margins and improved compatibility with different units.
Samples of the 750-V CoolSiC G2 MOSFETs in Q-DPAK packages, with RDS(on) values of 4 mΩ, 7 mΩ, 16 mΩ, 25 mΩ, and 60 mΩ, are actually out there for order. For extra data, click on right here.
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