Infineon Applied sciences AG has launched the world’s first gallium nitride energy transistors with built-in Schottky diode for industrial use. The product household of medium-voltage CoolGaN Transistors G5 with built-in Schottky diode will increase the efficiency of energy programs by lowering undesired deadtime losses, thereby additional growing total system effectivity. Moreover, the built-in answer simplifies the facility stage design and reduces BOM price.
In hard-switching functions, GaN-based topologies could incur increased energy losses because of the bigger efficient physique diode voltage of GaN units. This will get worse with lengthy controller dead-times, leading to decrease effectivity than focused. Till now, energy design engineers usually require an exterior Schottky diode in parallel with the GaN transistor or attempt to cut back dead-times by way of their controllers. All of which is further effort, time and price. The brand new CoolGaN Transistor G5 from Infineon considerably reduces these challenges by providing a GaN transistor with an built-in Schottky diode acceptable to be used in server and telecom IBCs, DC-DC converters, synchronous rectifiers for USB-C battery chargers, high-power PSUs, and motor drives.
“As gallium nitride know-how turns into more and more widespread in energy designs, Infineon acknowledges the necessity for steady enchancment and enhancement to satisfy the evolving calls for of shoppers”, says Antoine Jalabert, Vice President of Infineon’s Medium-Voltage GaN Product Line, “The CoolGaN Transistor G5 with Schottky diode exemplifies Infineon’s dedication to an accelerated innovation-to-customer method to additional push the boundaries of what’s potential with wide-bandgap semiconductor supplies.“
GaN transistor reverse conduction voltage (VRC) depends on the brink voltage (VTH) and the OFF-state gate bias (VGS) because of the lack of physique diode. Furthermore, the VTH of a GaN transistor is usually increased than the turn-on voltage of a silicon diode resulting in a drawback throughout the reverse conduction operation, often known as third quadrant. Therefore, with this new CoolGaN Transistor, reverse conduction losses are decrease, compatibility with a wider vary of high-side gate drivers, and with deadtime relaxed, there’s broader controller compatibility leading to less complicated design.
The primary of a number of GaN transistors with built-in Schottky diode is the 100 V 1.5 mΩ transistor in 3 x 5 mm PQFN bundle.
