Two half-bridge GaN gate drivers from ST combine a bootstrap diode and linear regulators to generate high- and low-side 6-V gate indicators. The STDRIVEG210 and STDRIVEG211 goal techniques powered from industrial or telecom bus voltages, 72-V battery techniques, and 110-V AC line-powered tools.
The high-side driver of every system withstands rail voltages as much as 220 V and is well equipped by means of the embedded bootstrap diode. Separate gate-drive paths can sink 2.4 A and supply 1.0 A, guaranteeing quick switching transitions and easy dV/dt tuning. Each gadgets supplier brief propagation delay with 10-ns matching for low dead-time operation.
ST’s gate drivers help a broad vary of power-conversion purposes, together with energy provides, chargers, photo voltaic techniques, lighting, and USB-C sources. The STDRIVEG210 works with each resonant and hard-switching topologies, providing a 300-ns startup time that minimizes wake-up delays in burst-mode operation. The STDRIVEG211 provides overcurrent detection and sensible shutdown features for motor drives in instruments, e-bikes, pumps, servos, and class-D audio techniques.
Now in manufacturing, the STDRIVEG210 and STDRIVEG211 are available in 5×4-mm, 18-pin QFN packages. Costs begin at $1.22 every in portions of 1000 items. Analysis boards are additionally accessible.
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