Ampleon has launched 4 700-W GaN-on-SiC RF transistors for S-band radar methods, working between 2.7 GHz and three.5 GHz. The CLS3H2731 and CLS3H3135 sequence leverage a radar-optimized GaN-on-SiC platform that mixes frequency-specific design, long-pulse assist, and sturdy thermal efficiency—options past normal GaN transistors.
The transistors span two frequency ranges: 2.7 GHz to three.1 GHz and three.1 GHz to three.5 GHz. Gadgets in every vary are supplied in flanged (SOT502A) and leadless ceramic (SOT502B) packages to fulfill various mechanical and thermal necessities. The lineup consists of:
- CLS3H2731L-700 (SOT502A, 2.7–3.1 GHz)
- CLS3H2731LS-700 (SOT502B, 2.7–3.1 GHz)
- CLS3H3135L-700 (SOT502A, 3.1–3.5 GHz)
- CLS3H3135LS-700 (SOT502B, 3.1–3.5 GHz)
Internally pre- and post-matched, the transistors provide excessive enter impedance and assist pulse lengths as much as 300 µs with obligation cycles of 10–20%. Low thermal resistance ensures dependable operation beneath excessive obligation cycles. Designed for superior radar transmitters, they’re well-suited for air visitors management, floor and naval protection, climate monitoring, surveillance, and particle acceleration.
Now in mass manufacturing, the RF transistors can be found via Ampleon’s world distributors, together with DigiKey and Mouser.
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