Medium-voltage CoolGaN G5 transistors from Infineon embody a built-in Schottky diode to attenuate dead-time losses and improve system effectivity. The built-in diode additionally streamlines energy stage design and helps scale back BOM price.
In hard-switching designs, GaN gadgets can undergo from greater energy losses as a result of physique diode conduct, particularly with lengthy controller lifeless instances. CoolGaN G5 transistors deal with this by integrating a Schottky diode, enhancing effectivity throughout purposes reminiscent of telecom IBCs, DC/DC converters, USB-C chargers, energy provides, and motor drives.
GaN transistor reverse conduction voltage (VRC) will depend on the edge voltage (VTH) and OFF-state gate bias (VGS), as there isn’t any physique diode. Since VTH is usually greater than the turn-on voltage of silicon diodes, reverse conduction losses improve in third-quadrant operation. The CoolGaN transistor reduces these losses, improves compatibility with high-side gate drivers, and permits broader controller compatibility as a result of relaxed dead-time.
The primary system within the CoolGaN G5 sequence with an built-in Schottky diode is a 100-V, 1.5-mΩ transistor in a 3×5-mm PQFN package deal. Engineering samples and a goal datasheet can be found upon request.
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