Infineon’s radiation-hardened GaN HEMT is the primary in-house manufactured gadget certified to the Joint Military Navy House (JANS) MIL-PRF-19500/794 specification—the best high quality certification issued by the U.S. Protection Logistics Company (DLA). The corporate’s new household of radiation-hardened CoolGaN transistors is designed for mission-critical purposes in on-orbit spacecraft, manned missions, and deep house probes.
The primary three gadgets within the GaN lineup are 100-V, 52-A transistors with a typical RDS(on) of 4 mΩ and a complete gate cost of 8.8 nC. Housed in hermetically sealed ceramic surface-mount packages, they’re hardened towards Single Occasion Results (SEE) as much as a Linear Power Switch (LET) of 70 MeV·cm²/mg utilizing gold (Au) ions. Two of the gadgets, whereas not JANS licensed, are screened to Complete Ionizing Dose (TID) ranges of 100 krad and 500 krad. The third gadget, additionally screened to 500 krad, meets the rigorous JANS MIL-PRF-19500/794 qualification.
Engineering samples and analysis boards can be found now, with the ultimate JANS-qualified gadget set for launch in summer time 2025. Extra JANS components will launch quickly, increasing the vary of obtainable voltage and present scores. For extra data on Infineon’s rad-hard GaN transistors, click on right here.
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