Infineon’s CoolGaN 650-V G5 bidirectional change (BDS) integrates two switches in a single machine to actively block present and voltage in each instructions. Its monolithic common-drain design with a double-gate construction, primarily based on gate injection transistor expertise, improves effectivity, reduces die dimension, and replaces typical back-to-back configurations.
The GaN change simplifies cycloconverter designs by enabling single-stage energy conversion, eliminating the necessity for a number of conversion phases. In microinverters, it helps greater energy density and a decrease element depend. It additionally allows superior grid capabilities reminiscent of reactive energy compensation and two-way energy stream.
The CoolGaN 650-V G5 BDS is obtainable in a TOLT package deal with RDS(on) values of 110 mΩ and 55 mΩ. It’s now open for ordering, with samples of the 110-mΩ model accessible.
The publish GaN change streamlines energy conversion appeared first on EDN.
