HomeElectronicsEnvironment friendly SiC MOSFETs For Energy Programs

Environment friendly SiC MOSFETs For Energy Programs


Excessive-power methods usually waste vitality and overheat. These SiC MOSFET modules make them sooner, cooler and extra environment friendly.

SemiQ Expands 1200 V Gen3 SiC MOSFET Line with Launch of 7.4, 14.5 and 34 mΩ SOT-227 Modules
SemiQ Expands 1200 V Gen3 SiC MOSFET Line with Launch of 7.4, 14.5 and 34 mΩ SOT-227 Modules

Excessive-power, medium-voltage functions usually battle with effectivity and thermal administration. Programs like battery chargers, photovoltaic inverters, server energy provides, and vitality storage setups want parts that may deal with excessive currents, swap quickly, and function reliably at elevated temperatures, whereas minimizing vitality loss. Conventional energy modules can restrict efficiency, generate extra warmth, and cut back total system effectivity.

– Commercial –

To handle this, new SiC MOSFET modules from SemiQ have been developed that ship decrease switching losses and improved thermal efficiency for demanding high-power environments. These modules combine Schottky Barrier Diodes (SBDs) to additional cut back losses beneath high-temperature operation, making them appropriate for quick, environment friendly energy conversion.

The modules are rugged, straightforward to mount, and have an remoted backplate with direct warmth sink attachment. They’re engineered to enhance switching velocity, cut back vitality loss, and simplify integration into energy methods. Particular fashions, just like the 7.4 mΩ module, obtain extraordinarily low switching losses and minimal physique diode reverse restoration, enhancing total effectivity.

Every module undergoes rigorous testing, together with wafer-level gate-oxide burn-in above 1400 V and avalanche testing as much as 800 mJ . Thermal efficiency is optimized, with junction-to-case thermal resistance starting from 0.23 °C/W for the bottom RDS(on) module to 0.70 °C/W for the very best, guaranteeing dependable operation in high-stress situations.

Dr. Timothy Han, President at SemiQ mentioned: “The growth of our third-generation 1200 V SiC MOSFET household marks one other key milestone in SemiQ’s mission to ship superior silicon carbide options for high-performance energy functions. By broadening our portfolio with decrease resistance choices and rugged, easy-to-mount SOT-227 packages, we’re empowering designers to attain greater effectivity, sooner switching, and better reliability throughout a variety of vitality and industrial methods.”

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