HomeElectronicsDry movie photoresist permits superb circuit formation

Dry movie photoresist permits superb circuit formation



Dry movie photoresist permits superb circuit formation

Asahi Kasei has developed the Sunfort TA collection of dry movie photoresist for next-generation semiconductor packages requiring circuit patterns with line/area widths of two/2 µm or much less. The movie affords excessive decision with typical stepper and laser direct imaging (LDI) methods—used to switch circuit patterns onto substrates—enhancing precision in back-end processes.

The TA collection helps superb wiring formation in panel-level packages and associated functions. It permits patterning with a 1.0-µm resist width utilizing LDI publicity in a 4-µm pitch design, as required for redistribution layer (RDL) formation (Figures a and b). The ensuing superb resist sample will be plated by a semi-additive course of, then stripped to yield a 3-µm broad plating sample inside the identical 4-µm pitch (Determine c).

Asahi Kasei states that Sunfort dry movie photoresist will stay integral to advancing panel-level packaging know-how as panel sizes enhance. With its means to attain finer wiring and enhance manufacturing effectivity, the TA collection addresses the rising demand for superior semiconductor bundle substrates and interposers in AI, automotive, communications, and IoT markets.

TA collection product web page

Asahi Kasei 

The submit Dry movie photoresist permits superb circuit formation appeared first on EDN.

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