SemiQ expands its 1200-V Gen3 SiC MOSFET household with SOT-227 modules providing on-resistance values of seven.4 mΩ, 14.5 mΩ, and 34 mΩ. GCMS fashions are co-packaged with a Schottky barrier diode (SBD), whereas GCMX sorts depend on the intrinsic physique diode.
The modules are designed for medium-voltage, high-power techniques reminiscent of battery chargers, photovoltaic inverters, server energy provides, and power storage items. Every gadget undergoes wafer-level gate-oxide burn-in testing above 1400 V and avalanche testing to 800 mJ (330 mJ for 34-mΩ sorts).
The 7.4-mΩ GCMX007C120S1-E1 reduces switching losses to 4.66 mJ (3.72 mJ turn-on, 0.94 mJ turn-off) and includes a body-diode reverse-recovery cost of 593 nC. Junction-to-case thermal resistance ranges from 0.23 °C/W for the 7.4-mΩ gadget to 0.70 °C/W for the 34-mΩ module.
All fashions have a rugged, remoted backplate for direct heat-sink mounting. Samples and quantity pricing can be found upon request. For extra details about the 1200-V Gen3 SiC MOSFET modules, click on right here.
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