A brand new era of 1200 V silicon carbide MOSFETs in a top-side-cooled Q-DPAK bundle boosts energy density, lowers losses, and simplifies thermal administration for EV chargers, photo voltaic inverters, and industrial programs.
Infineon Applied sciences has launched its new 1200 V CoolSiC G2 MOSFETs in a top-side-cooled Q-DPAK bundle, focusing on engineers designing compact, high-performance energy programs. These units ship larger effectivity, improved thermal administration, and diminished switching losses—vital benefits for functions like EV chargers, photo voltaic inverters, UPS programs, and industrial drives.
The second-generation CoolSiC MOSFETs considerably minimize vitality losses. Gadgets with equal RDS(on) values obtain as much as 25% decrease switching losses in comparison with the primary era, boosting system-level effectivity by as a lot as 0.1%. Whereas seemingly small, this achieve is substantial in high-power designs the place vitality financial savings compound over time.
The important thing options are:
- XT die connect know-how cuts thermal resistance by greater than 15%.
- Decrease working temperatures – units run as much as 11% cooler below load.
- Excessive-temperature resilience – rated for overload operation at junction temps as much as 200 °C.
- Strong design – engineered to withstand parasitic turn-on in demanding circumstances.
The Q-DPAK bundle’s top-side cooling strategy additional enhances thermal switch by dissipating warmth on to the heatsink, moderately than by means of the PCB. This simplifies thermal administration, helps larger energy densities, and allows extra compact system designs. The bundle is available in each single-switch and twin half-bridge variations, with a uniform 2.3 mm top throughout variants to streamline heatsink integration.
Past thermal advantages, the Q-DPAK design reduces parasitic inductance, minimizing voltage overshoot and interference throughout high-speed switching. Its compact surface-mount type issue additionally matches properly with automated manufacturing, lowering board house and manufacturing prices.
The household helps exhausting and soft-switching topologies together with PFC levels, LLC converters, and full-bridge inverters. With RDS(on) choices from 4 mΩ to 78 mΩ, designers can stability efficiency, thermal effectivity, and price relying on software wants. Further options comparable to Kelvin-source pins for correct gate drive, unipolar design for steady efficiency throughout temperature ranges, and built-in physique diodes for hard-switching resilience additional simplify system design. Optimized to be used with Infineon’s EiceDRIVER remoted gate drivers, the brand new CoolSiC Q-DPAK MOSFETs supply a flexible answer for compact, energy-efficient platforms in renewable vitality, e-mobility, and industrial automation.
