Three Gen 3 SiC Schottky diodes from Vishay are available low-profile SlimSMA HV (DO-221AC) packages with a minimal creepage distance of three.2 mm. The 1200-V/1- A VS-3C01EJ12-M3, 650-V/2-A VS-3C02EJ07-M3, and 1200-V/2-A VS-3C02EJ12-M3 use a merged PIN Schottky construction that helps high-speed operation. They mix low capacitive cost with temperature-stable switching conduct, serving to enhance effectivity in hard-switching energy designs.
In high-voltage functions, the diodes’ prolonged creepage distance enhances electrical isolation. Their SlimSMA HV bundle makes use of a molding compound with a CTI of ≥600 for robust insulation. The bundle additionally has a low profile of simply 0.95 mm—considerably thinner than the two.3 mm top of ordinary SMA and SMB packages with an identical footprint.
All three diodes function reliably as much as +175°C and have negligible reverse restoration, making them well-suited for bootstrap, anti-parallel, and PFC circuits in DC/DC and AC/DC converters utilized in server energy provides, power programs, and industrial drives.
Samples and manufacturing portions of the Gen 3 SiC diodes can be found now, with lead occasions of 14 weeks.
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