Engineered for next-gen AI servers, telecom methods, and photo voltaic inverters, the newest silicon carbide Schottky diodes provide ultra-low energy loss, rugged surge safety, and thermal stability as much as 175 °C.
Powering up its wide-bandgap semiconductor portfolio, Nexperia has launched two new 1200 V, 20 A silicon carbide (SiC) Schottky diodes tailor-made for energy-intensive purposes. Designed for methods the place effectivity and thermal resilience are non-negotiable, the PSC20120J and PSC20120L are optimized for high-efficiency energy conversion in AI server energy provide models (PSUs), telecom infrastructure, and photo voltaic inverter setups.
These newest diodes leverage SiC expertise’s inherent benefits to ship superior switching efficiency—nearly resistant to temperature, present, or velocity variations. That includes zero reverse restoration and temperature-independent capacitive switching, each units provide a class-leading figure-of-merit (Qc × VF), instantly translating to diminished energy loss and improved system-level effectivity.The important thing options are:
Key Options:
- Quick, easy switching efficiency
- Excessive surge present functionality (IFSM)
- Low leakage present
- Simple paralleling with optimistic temperature coefficient
Underneath the hood, each fashions incorporate a merged PiN Schottky (MPS) construction, which brings glorious surge present dealing with (excessive IFSM) to the desk. Which means fewer exterior safety circuits are wanted, letting design engineers minimize down on complexity whereas nonetheless hitting robust efficiency targets in compact, rugged high-voltage methods.
The 2 units are differentiated by packaging: the PSC20120J is available in a surface-mount Actual-2-Pin D2PAK R2P (TO-263-2) for space-constrained layouts, whereas the PSC20120L includes a Actual-2-Pin TO247 R2P (TO-247-2) through-hole bundle for high-power designs. Each packages are engineered for thermal reliability, supporting operation at junction temperatures as much as 175 °C.
With these additions, Nexperia continues to increase its SiC energy lineup, providing elements that meet the efficiency, reliability, and quantity manufacturing wants of industrial-scale purposes. Backed by Nexperia’s confirmed provide chain and high quality focus, these diodes are a sturdy alternative for engineers focusing on next-gen energy electronics.
These new 1200 V silicon carbide Schottky diodes are ideally fitted to high-efficiency energy conversion in demanding purposes comparable to AI server farm energy provide models (PSUs), the place constant efficiency and thermal reliability are vital. Additionally they meet the stringent necessities of telecom energy methods, guaranteeing steady operation below fluctuating masses. Moreover, their potential to deal with excessive voltages and harsh circumstances makes them a robust match for renewable vitality infrastructure, significantly in photo voltaic inverter purposes the place energy density and effectivity are paramount.
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