Constructed on Confirmed SuperGaN Expertise, 650-V Gen IV Plus Units Ship Sturdy Efficiency with Superior Thermal Effectivity and Extremely-Low Energy Loss
Renesas Electronics Company launched three new high-voltage 650V GaN FETs for AI information facilities and server energy provide methods together with the brand new 800V HVDC structure, E-mobility charging, UPS battery backup units, battery power storage and photo voltaic inverters. Designed for multi-kilowatt-class functions, these 4th-generation plus (Gen IV Plus) units mix high-efficiency GaN expertise with a silicon-compatible gate drive enter, considerably decreasing switching energy loss whereas retaining the working simplicity of silicon FETs. Supplied in TOLT, TO-247 and TOLL bundle choices, the units give engineers the flexibleness to customise their thermal administration and board design for particular energy architectures.
The brand new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS units leverage the strong SuperGaN platform, a field-proven depletion mode (d-mode) normally-off structure pioneered by Transphorm, which was acquired by Renesas in June 2024. Primarily based on low-loss d-mode expertise, the units provide superior effectivity over silicon, silicon carbide (SiC), and different GaN choices. Furthermore, they decrease energy loss with decrease gate cost, output capacitance, crossover loss, and dynamic resistance influence, with the next 4V threshold voltage, which isn’t achievable with at the moment’s enhancement mode (e-mode) GaN units.
Constructed on a die that’s 14 p.c smaller than the earlier Gen IV platform, the brand new Gen IV Plus merchandise obtain a decrease RDS (on) of 30 milliohms (mΩ), decreasing on-resistance by 14 p.c and delivering a 20 p.c enchancment in on-resistance output-capacitance-product determine of advantage (FOM). The smaller die dimension reduces system prices and lowers output capacitance, which ends up in increased effectivity and energy density. These benefits make the Gen IV Plus units excellent for cost-conscious, thermally demanding functions the place excessive efficiency, effectivity and small footprint are crucial. They’re absolutely appropriate with current designs for straightforward upgrades, whereas preserving current engineering investments.
Obtainable in compact TOLT, TO-247 and TOLL packages, they supply one of many broadest packaging choices to accommodate thermal efficiency and format optimization for energy methods starting from 1kW to 10kW, and even increased with paralleling. The brand new surface-mount packages embody backside facet (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, permitting simpler machine paralleling when increased conduction currents are wanted. Additional, the generally used TO-247 bundle supplies clients with increased thermal functionality to realize increased energy.
“The rollout of Gen IV Plus GaN units marks the primary main new product milestone since Renesas’ acquisition of Transphorm final 12 months,” mentioned Primit Parikh, Vice President of the GaN Enterprise Division at Renesas. “Future variations will mix the field-proven SuperGaN expertise with our drivers and controllers to ship full energy options. Whether or not used as standalone FETs or built-in into full system resolution designs with Renesas controllers or drivers, these units will present a transparent path to designing merchandise with increased energy density, lowered footprint and higher effectivity at a decrease whole system price.”
Distinctive d-mode Usually-off Design for Reliability and Straightforward Integration
Like earlier d-mode GaN merchandise, the brand new Renesas units use an built-in low-voltage silicon MOSFET – a novel configuration that achieves seamless normally-off operation whereas absolutely capturing the low loss, excessive effectivity switching advantages of the high- voltage GaN. As they use silicon FETs for the enter stage, the SuperGaN FETs are straightforward to drive with commonplace off-the-shelf gate drivers quite than specialised drivers which might be usually required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system builders.
GaN-based switching units are shortly rising as key applied sciences for next-generation energy semiconductors, fueled by demand from electrical autos (EVs), inverters, AI information heart servers, renewable power, and industrial energy conversion. In comparison with SiC and silicon-based semiconductor switching units, they supply superior effectivity, increased switching frequency and smaller footprints.
Renesas is uniquely positioned within the GaN market with its complete options, providing each high- and low-power GaN FETs, not like many suppliers whose success within the discipline has been primarily restricted to decrease energy units. This numerous portfolio allows Renesas to serve a broader vary of functions and buyer wants. Thus far, Renesas has shipped over 20 million GaN units for high- and low-power functions, representing greater than 300 billion hours of discipline utilization.
