EPC Area has introduced the EPC7030MSH, a radiation-hardened 300-V GaN FET for high-voltage, high-power area purposes. It helps front-end DC/DC converters in satellite tv for pc energy programs, energy conversion for high-voltage distribution buses, and electrical propulsion platforms requiring high-performance switching.
With a most RDS(on) of 35 mΩ and a typical gate cost of 25 nC (30 nC max), the EPC7030MSH delivers a steady drain present of fifty A at 5 V and a single-pulse drain present of 150 A for 300 µs. Based on EPC Area, these specs place it among the many highest-performing rad-hard FETs in its class.
The EPC7030MSH is rated for 300-V operation at a linear power switch (LET) of 63 MeV·cm²/mg and maintains single-event impact (SEE) immunity as much as 250 V at an LET of 84.6 MeV·cm²/mg. Additionally it is resistant to complete ionizing dose (TID) results below each high and low dose fee circumstances.
Engineering fashions of the EPC7030MSH value $236 every in portions of 500 items, whereas rad-hard space-qualified units are priced at $349 every.
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