Toshiba has launched 4 650-V third-generation SiC MOSFETs in compact 8×8-mm DFN packages. The surface-mount DFN reduces quantity by over 90% in comparison with leaded packages comparable to TO-247 (3-terminal) and TO-247-4L(X) (4-terminal). It additionally allows smaller parasitic impedance elements, serving to to decrease switching losses.
The bundle’s flat, leadless design allows a Kelvin connection for the gate-drive signal-source terminal, minimizing supply wire inductance. This improves switching pace and effectivity. For instance, the TW054V65C achieves about 55% decrease turn-on loss and 25% decrease turn-off loss in comparison with Toshiba’s current merchandise.
Properly-suited for industrial functions, the units can be utilized for switch-mode energy provides, EV charging stations, and photovoltaic inverters. Key specs embrace:
Toshiba has begun quantity shipments of the TW031V65C, TW054V65C, TW092V65C, and TW123V65C 650-V SiC MOSFETs within the 8×8-mm DFN bundle.
Toshiba Digital Gadgets & Storage
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