HomeElectronicsPSU combines GaN and SiC for hyperscale AI

PSU combines GaN and SiC for hyperscale AI



PSU combines GaN and SiC for hyperscale AI

Navitas introduced a production-ready 12-kW PSU reference design that achieves 97.8% effectivity for hyperscale AI information facilities with 120-kW rack densities. The design incorporates three-phase interleaved TP-PFC and FB-LLC phases, applied utilizing Gen-3 Quick SiC MOSFETs and 4th-generation high-power GaNSafe ICs, respectively. The GaNSafe ICs combine management, drive, sensing, and important safety capabilities, whereas IntelliWeave digital management enhances total efficiency.

IntelliWeave makes use of a hybrid technique combining Vital Conduction Mode (CrCM) and Steady Conduction Mode (CCM) to optimize effectivity from mild to full load. This strategy simplifies the design, reduces part rely, and lowers energy losses by 30% in comparison with typical CCM-only options.

The PSU meets Open Rack v3 (ORv3) and Open Compute Undertaking (OCP) requirements, with dimensions of 790×73.5×40 mm. It operates from 180 VAC to 305 VAC and delivers as much as 50 VDC, supplying 12 kW above 207 VAC and 10 kW under. Options embody energetic present sharing and safety towards overcurrent, overvoltage, undervoltage, and overtemperature. It operates from –5°C to +45°C, offers ≥20 ms hold-up time at 12 kW, and limits inrush present to ≤3× steady-state present for <20 ms. Cooling is supplied by an inner fan.

For extra details about the 12-kW PSU reference design, click on right here.

Navitas Semiconductor 

The publish PSU combines GaN and SiC for hyperscale AI appeared first on EDN.

RELATED ARTICLES

LEAVE A REPLY

Please enter your comment!
Please enter your name here

- Advertisment -
Google search engine

Most Popular

Recent Comments