Area-Saving Machine Affords Low Max. RthJC of 0.36 °C/W and Wettable Flanks to Enhance Thermal Efficiency and Solderability in Industrial Purposes
To supply greater effectivity for industrial functions, Vishay Intertechnology, Inc. launched a brand new 80 V TrenchFET Gen IV n-channel energy MOSFET within the PowerPAK 8x8SW bond wi-fi (BWL) package deal with best-in-class on-resistance. In comparison with competing units in the identical footprint, the Vishay Siliconix SiEH4800EW gives 15 % decrease on-resistance whereas decreasing RthJC by 18 %.
With on-resistance all the way down to 0.88 mΩ typical at 10 V, the system launched at this time minimizes energy losses from conduction to extend effectivity whereas bettering thermal efficiency with a low most RthJC of 0.36 °C/W. With its 8 mm by 8 mm footprint, the space-saving system occupies 50 % much less PCB area than MOSFETs within the TO-263 package deal whereas providing an ultra-low profile of 1 mm.
The SiEH4800EW implements a fused result in improve the supply PAD solderable space to three.35 mm², which is 4 occasions bigger than a standard PIN solder space. This decreases the present density between the MOSFET and PCB, decreasing the danger of electro-migration danger and enabling a extra sturdy design. As well as, the system’s wettable flanks improve solderability whereas making it simpler to visually examine the reliability of solder joints.
The MOSFET is right for synchronous rectification and OR-ing performance. Typical functions will embody motor drive controls, energy instruments, welding gear, plasma chopping machines, battery administration techniques, robotics, and 3D printers. In these functions, the system gives high-temperature operation to +175 °C, and its BWL design minimizes parasitic inductance whereas maximizing present functionality.
RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS examined.
